Schematic view of a back-gated field effect transistor fabricated by UCSB researchers using monolayer tungsten diselenide (WSe2) channel material (credit: Peter Allen, UCSB)

Researchers at UC Santa Barbara in collaboration with University of Notre Dame have demonstrated the highest reported drive current on a transistor made of a monolayer of tungsten diselenide (WSe2), a 2-dimensional atomic crystal categorized as a transition metal dichalcogenide (TMD).